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Preliminary
Product Description
Sirenza Microdevices' SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for 802.16 customer premise equipment (CPE) terminals in the 2.3-2.7 GHz bands. It can run from a 3V to 6V supply. The external output match and bias adjustability allows load line optimization for other applications or over narrower bands. It features an output power detector, on/off power control and high RF overdrive robustness. A 20dB step attenuator feature can be utilized by switching the second stage Power up/down control. This product features a RoHS compliant and Green package with matte tin finish, designated by the `Z' suffix.
SZM-2166Z
2.3-2.7GHz 2W Power Amplifier
Pb
RoHS Compliant & Green Package
6mm x 6mm QFN Package
Functional Block Diagram
Vcc = 5V
RFIN
RFOUT
* * * * * * * * *
Product Features
P1dB = 35dBm @ 6V Three Stages of Gain: 37dB 802.11g 54Mb/s Class AB Performance Pout = 27dBm @ 2.5% EVM, Vcc 6V, 878mA Active Bias with Adjustable Current On-chip Output Power Detector Low Thermal Resistance Power up/down control < 1s Attenuator step 20dB @ Vpc2 = 0V
Vbias = 5V
Stage 1 Bias
Stage 2 Bias
Stage 3 Bias
Applications
P ower Up/Dow n Control
P ower Detector
* * *
802.16 WiMAX Driver or Output Stage 802.11b/g WLAN, WiFi CPE Terminal Applications
Unit MHz dBm dB % dBc dB dB V mA mA A C/W 12 615 10 13 34.5 Min. 2300 35 36 2.5 -40 8.3 14 17 0.9 to 1.8 724 4 100 832 -35 Typ. Max. 2700
Key Specifications
Symbol fO P1dB S21 EVM% IM3 NF IRL ORL Vdet Range Icq IVPC Ileak Rth, j-l Parameters: Test Conditions, 2.5-2.7GHz App circuit, Z0 = 50, VCC = 6.0V, Iq = 724mA, TBP = 30C Frequency of Operation Output Power at 1dB Compression - 2.7GHz Small Signal Gain - 2.7GHz EVM at 27dBmOutput power EVM 802.11g 54Mb/s - 2.7GHz Third Order Suppression (Pout=23dBm per tone) - 2.7GHz Noise Figure at 2.7 GHz Worst Case Input Return Loss 2.5-2.7GHz Worst Case Output Return Loss 2.5-2.7GHz Output Voltage Range for Pout=10dBm to 33dBm Quiescent Current (Vcc = 6V) Power Up Control Current (Vpc=6V, ( IVPC1 +IVPC2+ IVPC3 ) Vcc Leakage Current (Vcc = 6V, Vpc = 0V) Thermal Resistance (junction - lead)
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2007 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 1
http://www.sirenza.com EDS-105683 Rev B
Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp
Typical Performance with appropriate app circuit(Vcc=6V, ***Icq=655mA, * 802.11g 54Mb/s 64QAM)
Parameter Gain @ Pout=26dBm P1dB EVM% at 27dBm Output Power* Current @ Pout 2.5% EVM* Input Return Loss Output Return Loss Units dB dBm % mA dB dB **2.3GHz 37.5 34 2.3 768 23 14 **2.4GHz 37.5 34 2.9 779 21 11 ***2.5GHz 37.5 35 1.7 900 14 20 ***2.6GHz 37 35 1.7 889 14 25 ***2.7GHz 35 35 2.5 878 14 18
**Measured with 2.3-2.4GHz Application circuit. See page 11 for details. ***Measured with 2.5-2.7GHz Application circuit. See page 13 for details
Absolute Maximum Ratings
Parameters VC3 Collector Bias Current (IVC3) VC2 Collector Bias Current (IVC2) VC1 Collector Bias Current (IVC1) *****Device Voltage (VD) Power Dissipation Operating Lead Temperature (TL) ****Max CW RF output Power for 50 ohm continuous long term operation Max CW RF Input Power for 50 ohm output load Max CW RF Input Power for 10:1 VSWR RF out load Max Storage Temperature Operating Junction Temperature (TJ) ESD Human Body Model Value 1500 500 150 9.0 6 -40 to +85 30 26 5 +150 +150 Class 1B Unit mA mA mA V W C dBm dBm dBm C C
Caution: ESD Sensitive
Appropriate precaution in handling, packaging and testing devices must be observed.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias conditions should also satisfy the following expression: IcqVcc < (TJ - TL) / RTH' j-l
Note: Icq in this equation is for the stage with the highest current
**** With specified application circuit. *****No RF Drive
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 2
http://www.sirenza.com EDS-105683 Rev B
Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp
Pin Out Description
Pin # 7, 11,12, 22, 29, 31, 39, 40 1,10, 21, 30 2 3 4-5 6 8 Function NC GND VC1 VBIAS12 R1A-R2A RFIN VPC1 Description These are no connect (NC) pins and are not wired inside the package. It is recommended to connect them as shown in the application circuit to achieve the stated performance. These pins are internally grounded inside the package to the backside ground paddle. It is recommended to also ground them external to the package to achieve the specified performance. This is the collector of the first stage. This is the supply voltage for the active bias circuit of the 1st and 2nd stages. A resistor is tied across these pins internal to the package. This is the RF input pin. It is DC grounded inside the package. Do not apply DC voltage to this pin. Power up/down control pin for the 1st stage. An external series resistor is required for proper setting of bias levels depending on control voltage. The voltage on this pin should never exceed the voltage on pin 3 by more than 0.5V unless the supply current from pin 3 is limited < 10mA. Power up/down control pin for the 2nd stage. Power down VPC<1V for step attenuator function enable. An external series resistor is required for proper setting of bias levels depending on control voltage. The voltage on this pin should never exceed the voltage on pin 3 by more than 0.5V unless the supply current from pin 3 is limited < 10mA. These two pins are connected internal to the package and connect to the 2nd stage collector. To achieve specified performance, the layout of these pins should match the Recommended Land Pattern, pg. 13. These pins have capacitors across them internal to the package as shown in the below schematic. They are used as tuning and RF coupling elements between the 2nd and 3rd stage. These are the connections to the base of the 3rd stage output device. To achieve specified performance, the layout of these pins should match the Recommended Land Pattern, pg. 13. Power up/down control pin for the 2nd stage. An external series resistor is required for proper setting of bias levels depending on control voltage. The voltage on this pin should never exceed the voltage on pin 32 by more than 0.5V unless the supply current from pin 33 is limited < 10mA. This is the output port for the power detector. It samples the power at the input of the 3rd stage. These are the RF output pins and DC connections to the 3rd stage collector. This is the supply voltage for the active bias circuit of the 3rd stage.
9
VPC2
13, 38 14-15 17-18 33-34 36-37 16,35 19 20 23-28 32
VC2A, VC2B C1A-C2A C3A-C4A C4B-C3B C2B-C1B VB3A, VB3B VPC3 VDET RFOUT VBIAS3
Simplified Device Schematic
C3B VBIAS3 VC2B VB3B C1B C2B C4B NC NC NC 31 30
40 GND VC1 VBIAS12 R1A R2A RFIN NC VPC1 VPC2 GND 10 11 C1A C2A C3A VC2A VB3A C4A VPC3 NC NC 1
GND NC RFOUT RFOUT RFOUT RFOUT RFOUT RFOUT NC
21 20 VDET
GND
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 3
http://www.sirenza.com EDS-105683 Rev B
Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp
Measured 2.3-2.4 GHz Application Circuit Data (Vcc = Vpc = 6.0V, Iq = 653mA, T=25C)
EVM vs Frequency, T=+25C 802.11g, OFDM 54Mb/s, 64QAM
5 4 EVM(%) EVM(%) 3 2 1 0 16 18 20 22 24 26 28 30 Pout(dBm) 2.3GHz 2.4GHz 5 4 3 2 1 0 16 18 20 22 24 26 +85C 28 30 Pout(dBm) -40C +25C
EVM vs Pout, F=2.3GHz 802.11g, OFDM 54Mb/s, 64QAM
EVM vs Pout, F=2.4GHz 802.11g, OFDM 54Mb/s, 64QAM
5 4 EVM(%) 3 2 1 0 16 18 20 22 24 26 +85C 28 30 Pout(dBm) -40C +25C IM3(dBc) -30 -35 -40 -45 -50 -55 -60 -65 -70 18
IM3 vs Pout (2 Tone Avg.), T=+25C Tone Spacing = 1MHz
20
22 Pout(dBm) 2.3GHz
24 2.4GHz
26
28
Typical Gain vs Pout, F=2.3GHz
44 42 40 Gain(dB) Gain(dB) 38 36 34 32 30 18 20 22 24 26 28 30 32 34 36 Pout(dBm) -40C +25C +85C 44 42 40 38 36 34 32 30 18 20
Typical Gain vs Pout, F=2.4GHz
22
24
26
28
30
32
34
36
Pout(dBm) -40C +25C +85C
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 4
http://www.sirenza.com EDS-105683 Rev B
Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp
Measured 2.3-2.4 GHz Application Circuit Data (Vcc = Vpc = 6.0V, Iq = 653mA, T=25C)
Narrowband S11 - Input Return Loss
-10 -12.5 -15 S11(dB) S12(dB) -17.5 -20 -22.5 -25 -27.5 -30 2.3 2.32 2.34 2.36 2.38 2.4 Frequency(GHz) -40C +25C +85C -40 -45 -50 -55 -60 -65 -70 -75 -80 2.3 2.32 2.34 2.36 2.38 2.4 Frequency(GHz) -40C +25C +85C
Narrowband S12 - Reverse Isolation
Narrowband S21 - Forward Gain
45 43 41 39 S21(dB) S22(dB) 37 35 33 31 29 27 25 2.3 2.32 2.34 -40C +25C 2.36 +85C 2.38 2.4 Frequency(GHz) -17.5 -20 2.3 0 -2.5 -5 -7.5 -10 -12.5 -15
Narrowband S22 - Output Return Loss
2.32
2.34
2.36
2.38
2.4
Frequency(GHz) -40C +25C +85C
DC Supply Current vs Pout, F=2.3GHz
1.6 1.4 1.2 Idc(A) 1 0.8 0.6 0.4 18 20 22 24 26 28 30 32 34 36 Pout(dBm) -40C +25C +85C Idc(A) 1.6 1.4 1.2 1 0.8 0.6 0.4 18 20
DC Supply Current vs Pout, F=2.4GHz
22
24
26
28
30
32
34
36
Pout(dBm) -40C +25C +85C
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 5
http://www.sirenza.com EDS-105683 Rev B
Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp
Measured 2.3-2.4 GHz Application Circuit Data (Vcc = Vpc = 6.0V, Iq = 653mA, T=25C)
RF Power Detector (Vdet) vs Pout, F=2.4GHz
2 1.8 1.6 Vdet(V) 1.4 1.2 1 7.5 0.8 18 20 22 24 -40C 26 28 +25C 30 +85C 32 34 36 7.4 2.3 2.31 2.32 2.33 2.34 2.35 2.36 2.37 2.38 2.39 2.4 Frequency(GHz) Pout(dBm) NF(dB) 8 7.9 7.8 7.7 7.6
Noise Figure vs Frequency, T=+25C
Broadband S11 -Input Return Loss, F=2.3-2.4GHz
0 -5 -10 S11(dB) S21(dB) -15 -20 -25 -30 -35 -40 0 1 2 3 Frequency(GHz) -40C +25C +85C 4 5 6 45 40 35 30 25 20 15 10 0
Broadband S21 - Forward Gain, F=2.3-2.4GHz
1
2
3 Frequency(GHz) -40C +25C
4
5
6
+85C
Broadband S22 - Output Return Loss, F=2.3-2.4GHz
0 -5 -10 -15 -20 -25 0 1 2 -40C 3 Frequency(GHz) +25C +85C 4 5 6
Delta(dB) 34 32 30
2.3-2.4GHz 20dB Step Attenuator Gain Delta vs Temp. Attenuator Enabled VPC2=0V
S22(dB)
28 26 24 22 20 2.3 2.31 2.32 2.33 2.34 2.35 2.36 2.37 2.38 2.39 2.4 Frequency(GHz)
T=-40c
T=+25c
T=+85c
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 6
http://www.sirenza.com EDS-105683 Rev B
Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp
Measured 2.4-2.5 GHz Application Circuit Data (Vcc = Vpc = 6.0V, Iq = 632mA, T=25C)
EVM vs Pout, F=2.4GHz 802.11g, OFDM 54Mb/s, 64QAM
5 4 EVM(%) EVM(%) 3 2 1 0 16 18 20 22 24 26 +85C 28 30 Pout(dBm) -40C +25C 5 4 3 2 1 0 16 18 20 22 -40C 24 +25C 26 +85C 28 30 Pout(dBm)
EVM vs Pout, F=2.5GHz 802.11g, OFDM 54Mb/s, 64QAM
EVM vs Frequency, T=+25C 802.11g, OFDM 54Mb/s, 64QAM
5 4 IM3(dBc) EVM(%) 3 2 1 0 16 18 20 22 24 26 28 30 Pout(dBm) 2.4GHz 2.5GHz -30 -35 -40 -45 -50 -55 -60 -65 -70 18
IM3 vs Pout (2 Tone Avg.), T=+25C Tone Spacing = 1MHz
20
22 Pout(dBm) 2.4GHz
24 2.5GHz
26
28
Typical Gain vs Pout, F=2.4GHz
44 42 40 Gain(dB) Gain(dB) 38 36 34 32 30 18 20 22 24 26 28 30 32 34 36 Pout(dBm) -40C +25C +85C 44 42 40 38 36 34 32 30 18 20
Typical Gain vs Pout, F=2.5GHz
22
24
26
28
30
32
34
36
Pout(dBm) -40C +25C +85C
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 7
http://www.sirenza.com EDS-105683 Rev B
Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp
Measured 2.4-2.5 GHz Application Circuit Data (Vcc = Vpc = 6.0V, Iq =632mA, T=25C)
Narrowband S11 - Input Return Loss
-10 -12.5 -15 S11(dB) S12(dB) -17.5 -20 -22.5 -25 -27.5 -30 2.4 2.42 2.44 2.46 2.48 2.5 Frequency(GHz) -40C +25C +85C -40 -45 -50 -55 -60 -65 -70 -75 -80 2.4 2.42 2.44 2.46 2.48 2.5 Frequency(GHz) -40C +25C +85C
Narrowband S12 - Reverse Isolation
Narrowband S21 - Forward Gain
45 43 41 39 S21(dB) S22(dB) 37 35 33 31 29 27 25 2.4 2.42 2.44 2.46 2.48 2.5 Frequency(GHz) -40C +25C +85C -27.5 -30 2.4 -17.5 -20 -22.5 -25 -10 -12.5 -15
Narrowband S22 - Output Return Loss
2.42
2.44 -40C +25C
2.46 +85C
2.48
2.5
Frequency(GHz)
DC Supply Current vs Pout, F=2.4GHz
1.6 1.4 1.2 Idc(A) 1 0.8 0.6 0.4 18 20 22 24 26 28 30 32 34 36 Pout(dBm) -40C +25C +85C Idc(A) 1.6 1.4 1.2 1 0.8 0.6 0.4 18 20
DC Supply Current vs Pout, F=2.5GHz
22
24 -40C
26
28 +25C
30 +85C
32
34
36
Pout(dBm)
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 8
http://www.sirenza.com EDS-105683 Rev B
Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp
Measured 2.4-2.5 GHz Application Circuit Data (Vcc = Vpc = 6.0V, Iq = 632mA, T=25C)
Noise Figure vs Frequency, T=+25C
8 7.9 7.8 NF(dB) 18 20 22 24 26 28 30 32 34 36 Pout(dBm) -40C +25C +85C 7.7 7.6 7.5 0.8 7.4 2.4 2.41 2.42 2.43 2.44 2.45 2.46 2.47 2.48 2.49 2.5 Frequency(GHz)
RF Power Detector (Vdet) vs Pout, F=2.5GHz
2.2 2 1.8 Vdet(V) 1.6 1.4 1.2 1
Broadband S11 -Input Return Loss, F=2.4-2.5GHz
0 -5 -10 S11(dB) S21(dB) -15 -20 -25 -30 -35 -40 0 1 2 3 Frequency(GHz) -40C +25C +85C 4 5 6 45 40 35 30 25 20 15 10 0
Broadband S21 - Forward Gain, F=2.4-2.5GHz
1
2 -40C
3 Frequency(GHz) +25C
4 +85C
5
6
Broadband S22 - Output Return Loss, F=2.4-2.5GHz
0 -5 -10 -15 -20
22 34 32 30
2.4-2.5GHz 20dB Step Attenuator Gain Delta vs Temp. Attenuator Enabled VPC2=0V
S22(dB)
Delta(dB) 0 1 2 -40C 3 Frequency(GHz) +25C +85C 4 5 6
28 26 24
-25
20 2.4 2.41 2.42 2.43 2.44 T=-40c 2.45 T=+25c 2.46 2.47 2.48 2.49 2.5
Frequency(GHz)
T=+85c
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 9
http://www.sirenza.com EDS-105683 Rev B
Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp
Measured 2.5-2.7 GHz Application Circuit Data (Vcc = Vpc = 6.0V, Iq = 724mA, T=25C)
EVM vs Frequency, T=+25C 802.11g, OFDM 54Mb/s, 64QAM
5 4 EVM(%) EVM(%) 3 2 1 0 16 18 20 2.5GHz 22 2.6GHz 24 26 2.7GHz 28 30 Pout(dBm) 5 4 3 2 1 0 16 18
EVM vs Pout, F=2.5GHz 802.11g, OFDM 54Mb/s, 64QAM
20
22
24
26 +85C
28
30
Pout(dBm) -40C +25C
EVM vs Pout, F=2.7GHz 802.11g, OFDM 54Mb/s, 64QAM
5 4 EVM(%) 3 2 1 -65 0 16 18 20 22 -40C 24 +25C 26 +85C 28 30 Pout(dBm) -70 18 IM3(dBc) -30 -35 -40 -45 -50 -55 -60
IM3 vs Pout (2 Tone Avg.), T=+25C Tone Spacing = 1MHz
20
22 Pout(dBm) 2.5GHz 2.6GHz
24 2.7GHz
26
28
Typical Gain vs Pout, F=2.5GHz
44 42 40 Gain(dB) 38 36 34 32 30 20 22 24 26 28 30 +85C 32 34 36 Pout(dBm) -40C +25C Gain(dB) 44 42 40 38 36 34 32 30 20 22
Typical Gain vs Pout, F=2.7GHz
24
26
28
30 +85C
32
34
36
Pout(dBm) -40C +25C
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 10
http://www.sirenza.com EDS-105683 Rev B
Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp
Measured 2.5-2.7 GHz Application Circuit Data (Vcc = Vpc = 6.0V, Iq = 724mA, T=25C)
Narrowband S11 - Input Return Loss
-10 -12.5 -15 -17.5 -20 -22.5 -25 2.5 2.55 -40C 2.6 Frequency(GHz) +25C +85C 2.65 2.7 S12(dB) S11(dB) -40 -45 -50 -55 -60 -65 -70 -75 -80 2.5 2.55 -40C 2.6 Frequency(GHz) +25C +85C 2.65 2.7
Narrowband S12 - Reverse Isolation
Narrowband S21 - Forward Gain
45 43 41 39 S21(dB) S22(dB) 37 35 33 31 29 27 25 2.5 2.55 2.6 Frequency(GHz) -40C +25C +85C 2.65 2.7 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 2.5
Narrowband S22 - Output Return Loss
2.55
2.6 Frequency(GHz) -40C +25C +85C
2.65
2.7
DC Supply Current vs Pout, F=2.5GHz
1.8 1.6 1.4 Idc(A) 1.2 1 0.8 0.6 18 20 22 24 26 28 Pout(dBm) -40C +25C +85C 30 32 34 36 38 Idc(A) 1.8 1.6 1.4 1.2 1 0.8 0.6 18 20
DC Supply Current vs Pout, F=2.7GHz
22
24
26
28 Pout(dBm)
30
32
34
36
38
-40C
+25C
+85C
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 11
http://www.sirenza.com EDS-105683 Rev B
Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp
Measured 2.5-2.7 GHz Application Circuit Data (Vcc = Vpc = 6.0V, Iq = 724mA, T=25C)
RF Power Detector (Vdet) vs Pout, F=2.7GHz
8.5 2.4 2.2 2 Vdet(V) NF(dB) 1.8 1.6 1.4 1.2 1 0.8 18 20 22 24 26 28 Pout(dBm) -40C +25C +85C 30 32 34 36 38 8.0 2.5 2.52 8.1 8.3 8.4
Noise Figure vs Frequency, T=+25C
8.2
2.54
2.56
2.58
2.6
2.62
2.64
2.66
2.68
2.7
Frequency(GHz)
Broadband S11 -Input Return Loss, F=2.5-2.7GHz
0 -5 -10 S11(dB) S21(dB) -15 -20 -25 -30 -35 -40 0 1 2 3 4 5 6 Frequency(GHz) -40C +25C +85C 45 40 35 30 25 20 15 10 0
Broadband S21 - Forward Gain, F=2.5-2.7GHz
1
2 -40C
3 Frequency(GHz) +25C
4 +85C
5
6
Broadband S22 - Output Return Loss, F=2.5-2.7GHz
0 -5 -10 -15 -20 -25 0 1 2 -40C 3 Frequency(GHz) +25C +85C 4 5 6
34 32 30
2.5-2.7GHz 20dB Step Attenuator Gain Delta vs Temp. Attenuator Enabled VPC2=0V
S22(dB)
Delta(dB)
28 26 24 22 20 2.5 2.52 2.54 2.56 2.58 2.6 2.62 2.64 2.66 2.68 2.7
Frequency(GHz)
T=-40c T=+25c T=+85c
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 12
http://www.sirenza.com EDS-105683 Rev B
Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp
2.3-2.4 GHz Evaluation Board Schematic For Vcc = V+ = Vpc = 6.0V
2.3-2.4 GHz Evaluation Board Layout For Vcc = V+ = Vpc = 6.0V
Board material GETEK, 10mil thick, Dk=3.9, 2 oz. copper
C1 C7 C3 R7 C6 L3 L2 R6 C5 L1 Q1 C8 C4 C2 C9 C10
R5 R1 R2 R3 R4
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 13
http://www.sirenza.com EDS-105683 Rev B
Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp
2.4-2.5 GHz Evaluation Board Schematic For Vcc = V+ = Vpc = 6.0V
2.4-2.5 GHz Evaluation Board Layout For Vcc = V+ = Vpc = 6.0V
Board material GETEK, 10mil thick, Dk=3.9, 2 oz. copper
C1 C7 C3 R7 C6 L3 L2 R6 C5 L1 Q1 C10 C8 C4 C2 C9
R5 R1 R2 R3 R4
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 14
http://www.sirenza.com EDS-105683 Rev B
Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp
2.5-2.7 GHz Evaluation Board Schematic For Vcc = V+ = Vpc = 6.0V
2.5-2.7 GHz Evaluation Board Layout For Vcc = V+ = Vpc = 6.0V
Board material GETEK, 10mil thick, Dk=3.9, 2 oz. copper
C1 C7 C3 R7 C6 L3 L2 R6 C5 L1 Q1 C8 C4 C2 C9
R5 R1 R2 R3 R4
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 15
http://www.sirenza.com EDS-105683 Rev B
Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp
Part Symbolization
The part will be symbolized with "SZM2166Z" to designate it as a RoHs green compliant product. Marking designator will be on the top surface of the package.
Part Number SZM-2166Z SZM-2166Z-EVB1 SZM-2166Z-EVB2 Part Number Ordering Information Description Lead Free, RoHs compliant 2.3-2.4GHz Evaluation Board 2.4-2.5GHz Evaluation Board 2.5-2.7GHz Evaluation Board Reel Size 7" N/A N/A N/A Devices/ Reel 1000 N/A N/A N/A
Package Outline Drawing (dimensions in mm):
SZM-2166Z-EVB3
Recommended Metal Land Pattern (dimensions in mm[in]):
Recommended PCB Soldermask for Land Pattern (dimensions in mm[in]):
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 16
http://www.sirenza.com EDS-105683 Rev B

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